S9012LT pnp epitaxial silicon transistor publication order number: [ S9012LT ] ? bruckewell technology corporation rev. a - 2014 features ? excellent hfe linearity hfe ? hfe(2)=25(min.) at vce=6v ,ic=400m ? high total power dissipation: pc=225mw ? rohs compliant package m echanical d ata ? case: sot - 23 molded plastic ? epoxy: ul94v - o rate flame retardant packing & order information 3,000/reel graphic symbol
S9012LT pnp epitaxial silicon transistor publication order number: [ S9012LT ] ? bruckewell technology corporation rev. a - 2014 maximum ratings and electrical characteristics maximum ratings (ta=25 c unless otherwise noted ) symbol parameter s9012 unit v cbo collector - base voltage - 40 v dc v c e o collector - emitter voltage - 30 v dc v e bo emitter - base voltage - 5 v dc i c collector current - 500 m a dc p d collector power dissipation 300 m w tj , tstg junction and storage temperature - 55 to +1 50 c electrical characteristics @ ta=25 c unless otherwise specified symbol parameter test condi tions min typ max u nit v (br) cbo collector - base breakdown voltage i c = - 10 0a - 40 v v (br)c e o collector - emitter breakdown voltage i c = - 1 m a - 30 v v (br) eb o emitter - base breakdown voltage i e = - 10 0a - 5 v i cbo collector cut - off current v cb = - 35 v , i e = 0 - 0.1 u a i e bo emitter cut - off current v eb = - 5 v , i c = 0 - 0 .1 u a h fe (1) dc current gain v ce = - 1 v , i c = - 100 m a 7 0 400 v ce(sat) collector - emitter saturation voltage i c = - 500 m a , i b = - 50 m a - 0.6 v v be base - emitter saturation voltage v ce = - 1 v, i c = - 100ma - 0.8 - 1.0 v f t transition frequency v ce = - 6 v , i c = - 2 0 m a 150 300 mhz c ob collector o utput capacitance v cb = - 6 v , i e = 0 f = 1.0mhz 7 10 pf classification of h fe rank l h rang 70 - 200 200 - 400
S9012LT pnp epitaxial silicon transistor publication order number: [ S9012LT ] ? bruckewell technology corporation rev. a - 2014 typical characteristics @ ta=25 c unless otherwise specified fig. 1 - static characteristics fig. 2 - dc current gain fig. 3 - base - emitter saturation voltage collector - emitter saturation volat age fig. 4 - current gain bandwidth product
S9012LT pnp epitaxial silicon transistor publication order number: [ S9012LT ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (col lectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the s uitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameter s provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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